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BZX84C5V6 PDF Datasheet

The BZX84C5V6 is 300mW SURFACE MOUNT ZENER DIODE. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Product Description and Specifications

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NO Part No Descripción Manufacturers
1BZX84C5V6Zener Diodes

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Planar Die construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes BZX84C2V4
MCC
MCC
2BZX84C5V6Zener Diode, Rectifier
KEC
KEC
3BZX84C5V6SILIICON PLANAR VOLTAGE REGULATOR DIODE

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR VOLTAGE REGULATOR DIODE 3 2 1 3 Pin Configuration 1 = A N ODE 2 = NC 3 = CATHODE 12 BZX84C2V4 to 75V SOT-23 Formed SMD Package Low voltage general purpose voltage regulator diode ABSOLUTE
CDIL
CDIL
4BZX84C5V6Surface Mount Zener Diode
Taiwan Semiconductor
Taiwan Semiconductor
5BZX84C5V6SILICON ZENER DIODE

BZX84C2V4 THRU BZX84C47 SURFACE MOUNT 350mW SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BZX84C2V4 Series are surface mount silicon Zener diodes. These high quality voltage regulating diodes are designed for use in industrial, comm
Central Semiconductor
Central Semiconductor
6BZX84C5V6Surface Mount Zener Diodes
WEITRON
WEITRON

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Relevant Search Results

Part NoDescriptionManufacturersPDF
BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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datasheet BZX11 pdf
BZX11Zener DiodeCOS
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BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
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datasheet BZX12 pdf

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