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BZX84C4V7W PDF Datasheet

The BZX84C4V7W is 200mW, Zener Diode ( SMD Type). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Product Description and Specifications

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NO Part No Descripción Manufacturers
1BZX84C4V7WZener Diode, Rectifier

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DLRGHV BZX84C2V4W-BZX84C39W ZENER DIODE FEATURES z Planar Die Construction z 200mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power Dissipation SOT-323 Maximum Ratings(Ta=25�
JCET
JCET
2BZX84C4V7WSurface Mount Zener Voltage Regulator Diodes
SeCoS
SeCoS
3BZX84C4V7W200mW, Zener Diode ( SMD Type)

Features • Planar Die Construction • 200mW Power Dissipation • Zener Voltages from 2.4V – 39V • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 4) • "Green" Device (Notes 1 and 2) BZX84C2V4W - BZX84C39W 200mW SURFACE MOUNT ZENER DIODE Mechanical Data • Case: SOT-3
Diodes
Diodes
4BZX84C4V7WZener Diode
LGE
LGE
5BZX84C4V7WZener Diode, Rectifier

WEITRON Surface Mount Zener Diode Pb Features: * Planar Die Construction * 200mW Power Dissipation on FR-4 PCB * General purpose, Medium Current * Ideally Suited for Automated Assembly SOT-323 Outline Demensions A TOP VIE W BC D EG H K L J M BZX84C2V4W Series ZENER DIODE 200m WATTS 3 1 2 31
WEITRON
WEITRON
6BZX84C4V7W200mW, Zener Diode ( SMD Type)
Diodes
Diodes

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Relevant Search Results

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BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
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datasheet BZX12 pdf

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