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BZX84C47 PDF Datasheet

The BZX84C47 is 350mW SURFACE MOUNT ZENER DIODE. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Product Description and Specifications

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NO Part No Descripción Manufacturers
1BZX84C47Zener Diodes

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Planar Die construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes BZX84C2V4
MCC
MCC
2BZX84C47SILIICON PLANAR VOLTAGE REGULATOR DIODE
CDIL
CDIL
3BZX84C47SILICON ZENER DIODE

BZX84C2V4 THRU BZX84C47 SURFACE MOUNT 350mW SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BZX84C2V4 Series are surface mount silicon Zener diodes. These high quality voltage regulating diodes are designed for use in industrial, comm
Central Semiconductor
Central Semiconductor
4BZX84C47Surface Mount Zener Diodes
WEITRON
WEITRON
5BZX84C47Zener Diode

BZX84CXXX Rev.F Mar.-2016 描述 / Descriptions SOT-23 塑封封装 稳压二极管。 Zener Diode in a SOT-23 Plastic Package.  特征 / Features 300mW 功耗,非常适合于自动化装配流程。 300mW power dissipation, Ideally Suited for Automated Assembly.  用途 / Applications 适用
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
6BZX84C47SURFACE MOUNT SILICON ZENER DIODES
Pan Jit International
Pan Jit International

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Relevant Search Results

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BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
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datasheet BZX12 pdf

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