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BZX84C3 PDF Datasheet

The BZX84C3 is 350mW SURFACE MOUNT ZENER DIODE. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Product Description and Specifications

Displays the Product Image or Pinouts.


NO Part No Descripción Manufacturers
1BZX84C3SURFACE MOUNT SILICON ZENER DIODES

BZX84C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volt POWER 410 mWatt FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU dire
Pan Jit International
Pan Jit International
2BZX84C3350mW SURFACE MOUNT ZENER DIODE
Won-Top Electronics
Won-Top Electronics
3BZX84C3Silicon 410 mWatt Zener Diodes

MCC Features l l l l   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BZX84C2V4 THRU BZX84C39 Silicon 410 mWatt Zener Diodes Planar Die construction 410mW Power Dissipation Zener Voltages from 2.4V - 39V Ideally Suited for Automate
Micro Commercial Components
Micro Commercial Components
4BZX84C3SURFACE MOUNT ZENER DIODES/SOT-23
Jinan Gude Electronic Device
Jinan Gude Electronic Device
5BZX84C3Zener Diode, Rectifier ( SMD )

CE CHENYI ELECTRONICS BZX84C-SERIES SURFACE MOUNT ZENER DIODES 350mW Part No. BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 BZX84C3V9 BZX84C4V3 BZX84C4V7 BZX84C5V1 BZX84C5V6 BZX84C6V2 BZX84C6V8 BZX84C7V5 BZX84C8V2 BZX84C9V1 BZX84C10 BZX84C11 BZX84C12 BZX84C13 BZX84C15 BZX84C16 BZX84C18 BZX84C20 BZX84C22 B
Shanghai Lunsure Electronic Tech
Shanghai Lunsure Electronic Tech
6BZX84C30Zener Diodes
MCC
MCC

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Relevant Search Results

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BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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