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BZX84C2V7 PDF Datasheet

The BZX84C2V7 is 300mW SURFACE MOUNT ZENER DIODE. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Product Description and Specifications

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NO Part No Descripción Manufacturers
1BZX84C2V7Zener Diodes

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Planar Die construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes BZX84C2V4
MCC
MCC
2BZX84C2V7Zener Diode, Rectifier
KEC
KEC
3BZX84C2V7SURFACE MOUNT ZENER DIODE

BZX84C2V4BZX84C39 SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 2.4 to 39 Volts POWER RATING 350 mWatts FEATURES * Planar Die Construction * 350mW Power Dissipation * Zener Volages from 2.4V-39V * Ideally Suited for Automated Assembly Processes MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rat
Rectron
Rectron
4BZX84C2V7SILIICON PLANAR VOLTAGE REGULATOR DIODE
CDIL
CDIL
5BZX84C2V7Surface Mount Zener Diode

Small Signal Product BZX84C2V4 thru BZX84C39 Taiwan Semiconductor Surface Mount Zener Diode FEATURES - Zener voltages from : 2.4V - 39V - Planar die construction - Ideally suited for automated assembly processes - Moisture sensitivity : Level 1 per J-STD-020 MECHANICAL DATA - Case : SOT-23, mold
Taiwan Semiconductor
Taiwan Semiconductor
6BZX84C2V7SILICON ZENER DIODE
Central Semiconductor
Central Semiconductor

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Relevant Search Results

Part NoDescriptionManufacturersPDF
BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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datasheet BZX10 pdf
BZX10Zener DiodeCOS
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datasheet BZX10 pdf
BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
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datasheet BZX11 pdf
BZX11Zener DiodeCOS
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datasheet BZX11 pdf
BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
datasheet BZX12 pdf

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