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BZX84C PDF Datasheet

The BZX84C is SURFACE MOUNT ZENER DIODES/SOT-23. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Product Description and Specifications

Displays the Product Image or Pinouts.


NO Part No Descripción Manufacturers
1BZX84CSURFACE MOUNT ZENER DIODES/SOT-23

Jinan Gude Electronic Device
Jinan Gude Electronic Device
2BZX84CSeries Zeners
Fairchild Semiconductor
Fairchild Semiconductor
3BZX84CZener Diode, Rectifier ( SMD )

CE CHENYI ELECTRONICS BZX84C-SERIES SURFACE MOUNT ZENER DIODES 350mW Part No. BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 BZX84C3V9 BZX84C4V3 BZX84C4V7 BZX84C5V1 BZX84C5V6 BZX84C6V2 BZX84C6V8 BZX84C7V5 BZX84C8V2 BZX84C9V1 BZX84C10 BZX84C11 BZX84C12 BZX84C13 BZX84C15 BZX84C16 BZX84C18 BZX84C20 BZX84C22 B
Shanghai Lunsure Electronic Tech
Shanghai Lunsure Electronic Tech
4BZX84C010Diody
FKt
FKt
5BZX84C012Diody

Diody Obj.č 1500296 1500297 1500298 1500299 1500300 1500301 1500302 1500303 1500304 1500305 1500306 1500307 1500308 1500309 1500310 1500311 1500312 1500313 1500314 1500315 1500316 1500317 1500318 1500319 1500320 1500321 1500323 1500325 1500326 1500327 TYP BZX85V007.5 BZX85V008.2 BZX85V009.1 BZX85V0
FKt
FKt
6BZX84C015Diody
FKt
FKt

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Relevant Search Results

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BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
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