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BZX55B20 PDF Datasheet

The BZX55B20 is Silicon Epitaxial Planar Z-Diodes. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Product Description and Specifications

Displays the Product Image or Pinouts.


NO Part No Descripción Manufacturers
1BZX55B20Silicon Zener Diode, Rectifier

BZX55B SILICON PLANAR ZENER DIODES Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Max. 0.45 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Glass Case DO-34 Dimensi
SEMTECH
SEMTECH
2BZX55B20Zener Diode
Taiwan Semiconductor
Taiwan Semiconductor
3BZX55B20SILICON ZENER DIODES

BZX55B2V0 ~ BZX55B100 VZ : 2.0 - 100 Volts PD : 500 mW SILICON ZENER DIODES DO - 35 0.079(2.0 )max. 1.00 (25.4) min. FEATURES : * Complete 2.0 to 100 Volts * High surge current capability 0.150 (3.8) max. * High peak reverse power dissipation * High reliability * Low leakage current 0.020 (0.
EIC
EIC
4BZX55B20Small Signal Zener Diodes
Vishay
Vishay
5BZX55B20Silicon Epitaxial Planar Z-Diodes

BZX55B... Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D D Very sharp reverse characteristic Low reverse current level Low noise Very high stability Available with tighter tolerances VZ–tolerance ± 2% Applications Voltage stabilization 94 9367 Absolute Maximum Rating
Vishay Telefunken
Vishay Telefunken
6BZX55B200Silicon Zener Diode, Rectifier
SEMTECH
SEMTECH

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Relevant Search Results

Part NoDescriptionManufacturersPDF
BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
datasheet BZX10 pdf
BZX10Zener DiodeCOS
COS
datasheet BZX10 pdf
BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
datasheet BZX11 pdf
BZX11Zener DiodeCOS
COS
datasheet BZX11 pdf
BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS
datasheet BZX12 pdf

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Part Number Function Manufacturers PDF
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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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This is a popular adjustable voltage regulator.
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On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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