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BYV27 PDF DatasheetThe BYV27 is EPITAXIAL AVALANCHE DIODES. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | BYV27 | EPITAXIAL AVALANCHE DIODES www.eicsemi.com
BYV27 SERIES
EPITAXIAL AVALANCHE DIODES
PRV : 50 - 200 Volts Io : 2.0 Amperes
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Very fast recovery * Pb , RoHS Free
DO - 41
0.107 (2.7) 0.080
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 EIC |
| 2 | Ultra fast low-loss controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV27 series Ultra fast low-loss controlled avalanche rectifiers
Product speci cation Supersedes data of 1996 Oct 02 1997 Nov 24
Philips Semiconductors
Product speci cation
Ultra fast low-loss controlled avalanche recti ers
FEATURES
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 NXP Semiconductors |
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| 3 | Ultra Fast Silicon Mesa Rectifiers BYV27, ...
Vishay Telefunken
Ultra Fast Silicon Mesa Rectifiers
Features
D D D D D
Controlled avalanche characteristic Low forward voltage Ultra fast recovery time Glass passivated junction Hermetically sealed package
Applications
Very fast rectifier e.g. for switch mode power supply
94 9539
Abs
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 Vishay Telefunken |
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| 4 | 2.0A SUPER-FAST GLASS BODY RECTIFIER BYV27, 50 - BYV27, 200
2.0A SUPER-FAST GLASS BODY RECTIFIER Features
· · · · · · Hermetically Sealed Glass Body Construction Controlled Avalanche Characteristics Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low
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 Diodes Incorporated |
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