BUZ90 PDF Datasheet

The BUZ90 is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	BUZ90	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 90 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 90 VDS 600 V ID 4.5 A RDS(on) 1.6 Ω Package TO-220 AB Ordering Code C67078-S1321-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4.5 Unit A ID IDpuls 18	Siemens Semiconductor Group
2	BUZ900	(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET MAGNA TEC 25.0 +0.1 -0.15 BUZ900 BUZ901 MECHANICAL DATA Dimensions in mm N CHANNEL POWER MOSFET 8.7 Max. 1.50 Typ. 11.60 ± 0.3 10.90 ± 0.1 POWER MOSFETS FOR AUDIO APPLICATIONS 30.2 ± 0.15 Ø 20 M ax. 39.0 ± 1.1 16.9 ± 0.15 1 2 Ø 1.0 FEATURES HIGH SPEED SWITCHING N CHANNEL POWE	Magna
3	BUZ900	Trans MOSFET N-CH 160V 8A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
4	BUZ900DP	(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET MAGNA TEC 20.0 5.0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2.0 2 3 2.0 1.0 HIGH SPEED SWITCHING N CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING	ETC

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Relevant Search Results

Part No	Description	Manufacturers	PDF
BUZ900X4S	NEW PRODUCT UNDER DEVELOPMENT MAGNA TEC 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) BUZ900X4S BUZ901X4S NEW PRODUCT UNDER DEVELOPMENT MECHANI	ETC
BUZ901X4S	NEW PRODUCT UNDER DEVELOPMENT MAGNA TEC 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) BUZ900X4S BUZ901X4S NEW PRODUCT UNDER DEVELOPMENT MECHANI	ETC
BUZ90A	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 90 A SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 90 A VDS 600 V ID 4A RDS(on) 2Ω Package TO-220 AB Ordering Code C67078-S1321-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 4 Unit A ID IDpuls 16 TC	Siemens Semiconductor Group
BUZ93	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)	Siemens Semiconductor Group
BUZ92	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)	Siemens Semiconductor Group
BUZ91AF	600V / 8A / SIPMOS Power Transistor	Siemens
BUZ91A	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)	Siemens Semiconductor Group

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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