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BUZ72A PDF DatasheetThe BUZ72A is N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | BUZ72A | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS BUZ72A
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE BUZ72A
s s s s s s s
V DSS 100 V
R DS( on) < 0.25 Ω
ID 11 A
TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEM
|
 STMicroelectronics |
| 2 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 72 A
SIPMOS ® Power Transistor
N channel Enhancement mode Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 72 A
VDS
100 V
ID
9A
RDS(on)
0.25 Ω
Package TO-220 AB
Ordering Code C67078-S1313-A3
Maximum Ratings Parameter Continuous drain current Symbol Values 9 Unit A
ID IDpuls
36
|
 Siemens Semiconductor Group |
|
| 3 | 9A/ 100V/ 0.250 Ohm/ N-Channel Power MOSFET BUZ72A
Data Sheet June 1999 File Number 2262.2
9A, 100V, 0.250 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power eld effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high
|
 Intersil Corporation |
|
| 4 | SIPMOS Power Transistor SIPMOS ® Power Transistor
BUZ 72A
N channel Enhancement mode Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
100 V
ID
9A
RDS(on)
0.25 Ω
Package
Ordering Code
BUZ 72 A
TO-220 AB
C67078-S1313-A3
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 ˚C
|
 Infineon Technologies AG |
|
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