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BU508AF PDF DatasheetThe BU508AF is Silicon Diffused Power Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | BU508AF | Silicon Diffused Power Transistor Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.
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 NXP Semiconductors |
| 2 | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) BU508AF
GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a plastic envelope,primarily for use in switching power circuites of colour television receivers
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SYMBOL
TOP-3Fa
CONDITIONS VBE = 0V MIN
VCESM VCEO IC ICM Ptot V
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 Wing Shing Computer Components |
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| 3 | TV Horizontal Output Applications BU508AF
BU508AF
TV Horizontal Output Applications
1
TO-3PF 2.Collector 3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCES VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Em
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 Fairchild Semiconductor |
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| 4 | High voltage NPN Power transistor
BU508AF
High voltage NPN Power transistor for standard Definition CRT display
Preliminary Data
Features
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State-of-the-art technology: Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tight hFE range a
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 ST Microelectronics |
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