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BSS83 PDF DatasheetThe BSS83 is MOSFET N-channel enhancement switching transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | BSS83 | MOSFET N-channel enhancement switching transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSS83 MOSFET N-channel enhancement switching transistor
Product speci cation File under Discrete Semiconductors, SC07 April 1991
Philips Semiconductors
Product speci cation
MOSFET N-channel enhancement switching transistor
DESCRIPTION Symmetrical insulated-gat
|
 NXP Semiconductors |
| 2 | SIPMOS Small-Signal-Transistor Rev. 1.0
BSS 83 P
SIPMOS ® Small-Signal-Transistor
Features
· P-Channel
·
Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
VDS RDS(on) ID
3
-60 2 -0.33
V
Enhancement mode
W
A
· Avalanche rated · Logic Level · dv, dt rated
2
1
VPS05161
|
 Infineon Technologies AG |
|
| 3 | MOSFET N-channel enhancement switching transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSS83 MOSFET N-channel enhancement switching transistor
Product speci cation File under Discrete Semiconductors, SC07 April 1991
Philips Semiconductors
Product speci cation
MOSFET N-channel enhancement switching transistor
DESCRIPTION Symmetrical insulated-gat
|
NXP Semiconductors |
|
| 4 | BSS83P | SIPMOS Small-Signal-Transistor Rev. 1.0
BSS 83 P
SIPMOS ® Small-Signal-Transistor
Features
· P-Channel
·
Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
VDS RDS(on) ID
3
-60 2 -0.33
V
Enhancement mode
W
A
· Avalanche rated · Logic Level · dv, dt rated
2
1
VPS05161
|
Infineon Technologies AG |
|
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