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BSS123LT1 PDF DatasheetThe BSS123LT1 is TMOS FET Transistor(N-Channel). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | BSS123LT1 | TMOS FET Transistor(N-Channel) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BSS123LT1, D
TMOS FET Transistor
N Channel
3 DRAIN 1 GATE 2 SOURCE
BSS123LT1
Motorola Preferred Device
®
MAXIMUM RATINGS
Rating Drain Source Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 s) Drain Current Continu
|
 Motorola Inc |
| 2 | Power MOSFET 170 mAmps/ 100 Volts BSS123LT1
Preferred Device
Power MOSFET 170 mAmps, 100 Volts
N Channel SOT 23
MAXIMUM RATINGS
Rating Drain Source Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 s) Drain Current Continuous (Note 1.) Pulsed (Note 2.) Symbol VDSS VGS VGSM ID IDM Value 100 ±20 ±40 0.17 0.68 Unit
|
 ON Semiconductor |
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| 3 | BSS123LT1G | Power MOSFET, Transistor BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts
N Channel SOT 23
Features http:, , onsemi.com
AEC Q101 Qualified and PPAP Capable BVSS123LT1G These Devices are Pb Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Drain Source Voltage Gate Source Voltage Continuous Non repetitive (tp
|
ON Semiconductor |
|
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