BP103BF-4 PDF Datasheet

The BP103BF-4 is NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	BP103BF-4	NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter BP 103 B BP 103 BF . NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103 B BP 103 BF Maβe in mm, wenn nicht anders angegeben, Dimensions in mm, unless otherwise specified.	Siemens Semiconductor Group
2	BP103BF-4	.NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 B BP 103 BF . NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103 B BP 103 BF Maβe in mm, wenn nicht anders angegeben, Dimensions in mm, unless otherwise specified.	Siemens Semiconductor Group

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Part No	Description	Manufacturers	PDF
BP103	NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Maβe in mm, wenn nicht anders angegeben, Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet f r Anwendungen im Bereich von 420 nm bis 1130 nm q Hohe Linearit t q TO-18, Bodenplatte, klares	Siemens Semiconductor Group
BP103-2	NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Maβe in mm, wenn nicht anders angegeben, Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet f r Anwendungen im Bereich von 420 nm bis 1130 nm q Hohe Linearit t q TO-18, Bodenplatte, klares	Siemens Semiconductor Group
BP103-3	NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Maβe in mm, wenn nicht anders angegeben, Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet f r Anwendungen im Bereich von 420 nm bis 1130 nm q Hohe Linearit t q TO-18, Bodenplatte, klares	Siemens Semiconductor Group
BP104S	Neu: Silizium-PIN-Fotodiode/ New: Silicon PIN Photodiode	Siemens Semiconductor Group
BP104FS	Silizium-PIN-Fotodiode mit Tageslichtsperrfilter	Siemens Semiconductor Group
BP104F	Silizium-PIN-Fotodiode mit Tageslichtsperrfilter	Siemens Semiconductor Group
BP1042	70 Mhz SAW Filter	RF Monolithics

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