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BLF881 PDF Datasheet

The BLF881 is UHF Power LDMOS Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 BLF881 UHF Power LDMOS Transistor

BLF881; BLF881S UHF power LDMOS transistor Rev. 01 10 December 2009 Preliminary data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excelle
NXP Semiconductors
NXP Semiconductors
2 BLF881S UHF Power LDMOS Transistor

BLF881; BLF881S UHF power LDMOS transistor Rev. 01 10 December 2009 Preliminary data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excelle
NXP Semiconductors
NXP Semiconductors




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Part NoDescriptionManufacturersPDF
BLF888 UHF Power LDMOS Transistor

BLF888 UHF power LDMOS transistor Rev. 01 16 December 2008 Objective data sheet 1. Product pro le 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110
NXP Semiconductors
NXP Semiconductors
datasheet BLF888 pdf
BLF881S UHF Power LDMOS Transistor

BLF881; BLF881S UHF power LDMOS transistor Rev. 01 10 December 2009 Preliminary data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excelle
NXP Semiconductors
NXP Semiconductors
datasheet BLF881S pdf
BLF888A UHF Power LDMOS Transistor

BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital
NXP Semiconductors
NXP Semiconductors
datasheet BLF888A pdf
BLF8G38LS-75V Power LDMOS transistorNXP Semiconductors
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datasheet BLF8G38LS-75V pdf
BLF8G27LS-150V Power LDMOS transistorNXP Semiconductors
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datasheet BLF8G27LS-150V pdf
BLF8G27LS-150GV Power LDMOS transistorNXP Semiconductors
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BLF8G27LS-140V Power LDMOS transistorNXP Semiconductors
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datasheet BLF8G27LS-140V pdf


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