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BF1211R PDF Datasheet

The BF1211R is N-channel dual-gate MOS-FETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 BF1211R N-channel dual-gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product speci cation 2003 Dec 16 Philips Semiconductors Product speci cation N-channel dual-gate MOS-FETs FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio
ETC
ETC
2 N-channel dual-gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product speci cation 2003 Dec 16 Philips Semiconductors N-channel dual-gate MOS-FETs Product speci cation BF1211; BF1211R; BF1211WR FEATURES Short channel transistor with high forward transfer admittance
Philips
Philips




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Part NoDescriptionManufacturersPDF
BF1211 N-channel dual-gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product speci cation 2003 Dec 16 Philips Semiconductors Product speci cation N-channel dual-gate MOS-FETs FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio
ETC
ETC
datasheet BF1211 pdf
BF1211WR N-channel dual-gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product speci cation 2003 Dec 16 Philips Semiconductors Product speci cation N-channel dual-gate MOS-FETs FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio
ETC
ETC
datasheet BF1211WR pdf
BF1210 Dual N-channel dual gate MOSFET

BF1210 Dual N-channel dual gate MOSFET Rev. 01 25 October 2006 Product data sheet 1. Product pro le 1.1 General description The BF1210 is a combination of two dual gate MOSFET ampli ers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable
NXP Semiconductors
NXP Semiconductors
datasheet BF1210 pdf
BF128128E LCD MODULEBolymin
Bolymin
datasheet BF128128E pdf
BF128128A FSTN Transflective LCDBolymin
Bolymin
datasheet BF128128A pdf
BF1218 Dual N-channel dual gate MOSFETNXP Semiconductors
NXP Semiconductors
datasheet BF1218 pdf
BF1216 Dual N-channel dual gate MOSFETNXP Semiconductors
NXP Semiconductors
datasheet BF1216 pdf


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