BF1101WR PDF Datasheet

The BF1101WR is N-channel dual-gate MOS-FETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	BF1101WR	N-channel dual-gate MOS-FETs DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product speci cation Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product speci cation N-channel dual-gate MOS-FETs FEATURES Short channel transistor with high forward transfer admitt	NXP Semiconductors

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Relevant Search Results

Part No	Description	Manufacturers	PDF
BF1100	Dual-gate MOS-FETs DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product speci cation File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product speci cation Dual-gate MOS-FETs FEATURES Specially designed for use at 9 to 12 V supply voltage	NXP Semiconductors
BF1100R	Dual-gate MOS-FETs DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product speci cation File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product speci cation Dual-gate MOS-FETs FEATURES Specially designed for use at 9 to 12 V supply voltage	NXP Semiconductors
BF1100WR	Dual-gate MOS-FET DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product speci cation File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product speci cation Dual-gate MOS-FET FEATURES Specially designed for use at 9 to 12 V supply voltage Short c	NXP Semiconductors
BF119	NPN SIlicon Transistors	ETC
BF118	NPN SIlicon Transistors	ETC
BF117	NPN SIlicon Transistors	ETC
BF115	2.0mm Pitch Socket	Global Connector Technology

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