BF1012S PDF Datasheet

The BF1012S is N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	BF1012S	N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) BF 1012S Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 5V Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1627 Pin Configuration 1	Siemens Semiconductor Group

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Part No	Description	Manufacturers	PDF
BF1012	N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network) BF 1012 Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 12V Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1012 Marking Ordering Code Pin Con	Siemens Semiconductor Group
BF1012W	SILICON N-CHANNEL MOSFET TETRODE (For low-noise/ gain-controlled input stages up to 1 GHz)	Siemens Semiconductor Group
BF105	2.0mm PITCH SOCKET	GCT
BF1012W	SILICON N-CHANNEL MOSFET TETRODE (For low-noise/ gain-controlled input stages up to 1 GHz)	Siemens Semiconductor Group
BF1012	N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network)	Siemens Semiconductor Group
BF1009SW	Silicon N-Channel MOSFET Tetrode	Infineon

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