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BDV66C PDF DatasheetThe BDV66C is Silicon PNP Darlington Power Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | BDV66C | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -16A ·Collector-Emitter Saturation Voltage: VCE(sat)= -2.0V(Max.)@ IC= -10A ·Complement to Type BDV67, A, B, C APPLICATIONS ·Designed for audio output stages and gen
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Inchange Semiconductor |
| 2 | PNP Darlington Power Transistor BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO Colle
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Comset Semiconductors |
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