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BC847S PDF DatasheetThe BC847S is NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | BC847S | DUAL TRANSISTOR JC(T
JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC847S DUAL TRANSISTOR (NPN+NPN)
APPLICATION This device is designed for general purpose amplifier applications
Marking :1C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
|
 JCET |
| 2 | NPN Transistor RoHS BC847S
Multi-Chip TRANSISTOR (NPN)
SOT-363
FEATURES Power dissipation
DPCM : 300 mW (Tamb=25℃)
TCollector current
.,LICM : 200 mA
Collector-base voltage
V(BR)CBO : 50
V
Operating and storage junction temperature range
OTJ,Tstg: -55℃to +150℃ CMARKING: 1C
ELECTRICAL CHARACTERIST
|
 WILLAS |
|
| 3 | NPN Multi-Chip General Purpose Amplifier SMD Type
Transistors
NPN Multi-Chip General Purpose Amplifier KC847S(BC847S)
Features
High current gain Low collector-emitter saturation voltage
SOT-363
1.3+0.1 -0.1 0.65
Unit: mm
0.525
+0.11.25 -0.1
+0.152.3 -0.15
0.36
0.3+0.1 -0.1
2.1+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
|
 Kexin |
|
| 4 | Dual General Purpose Transistor Dual General Purpose Transistor NPN Silicon
P b Lead(Pb)-Free
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation TA=25 C Junction Temperature
Storage Temperature
D
|
 WEITRON |
|
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