AUIRF2903Z PDF Datasheet

The AUIRF2903Z is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	AUIRF2903Z	Power MOSFET, Transistor AUTOMOTIVE GRADE PD -96379 AUIRF2903Z HEXFET® Power MOSFET D Features l l l l l l l V(BR)DSS RDS(on) typ. 30V 1.9mΩ 2.4mΩ 260Ak 160A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl	International Rectifier
2	AUIRF2903ZL	Power MOSFET, Transistor AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET�	Infineon
3	AUIRF2903ZL	Power MOSFET, Transistor AUTOMOTIVE GRADE Features l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * G PD - 96380 AUIRF2903ZS AUIRF2903ZL HEXFET® Power MOSFET D V(BR)DSS 30V	International Rectifier
4	AUIRF2903ZS	Power MOSFET, Transistor AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET�	Infineon

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Relevant Search Results

Part No	Description	Manufacturers	PDF
AUIRF7739L2TR	N-Channel HEXFET Power MOSFET AUTOMOTIVE GRADE Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability	International Rectifier
AUIRF7739L2TR1	N-Channel HEXFET Power MOSFET AUTOMOTIVE GRADE Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability	International Rectifier
AUIRF7665S2TR	N-Channel HEXFET Power MOSFET PD - 96286 AUTOMOTIVE GRADE Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI De	International Rectifier
AUIRS4427S	Automotive Grade Dual Low Side Driver	International Rectifier
AUIRS4426S	DUAL LOW SIDE DRIVER	International Rectifier
AUIRS2301S	HIGH AND LOW SIDE DRIVER	International Rectifier
AUIRS2124S	Automotive Grade	International Rectifier

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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