AT49BV008A PDF Datasheet

The AT49BV008A is 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	AT49BV008A	8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory Features 2.7V to 3.6V Read, Write Operation Fast Read Access Time - 120 ns Internal Erase, Program Control Sector Architecture One 8K Words (16K bytes) Boot Block with Programming Lockout Two 4K Words (8K bytes) Parameter Blocks One 496K Words (992K bytes) Main Memory Array Block Fast Sector	ATMEL Corporation
2	AT49BV008A-12CC	8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory Features 2.7V to 3.6V Read, Write Operation Fast Read Access Time - 120 ns Internal Erase, Program Control Sector Architecture One 8K Words (16K bytes) Boot Block with Programming Lockout Two 4K Words (8K bytes) Parameter Blocks One 496K Words (992K bytes) Main Memory Array Block Fast Sector	ATMEL Corporation
3	AT49BV008A-12CI	8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory Features 2.7V to 3.6V Read, Write Operation Fast Read Access Time - 120 ns Internal Erase, Program Control Sector Architecture One 8K Words (16K bytes) Boot Block with Programming Lockout Two 4K Words (8K bytes) Parameter Blocks One 496K Words (992K bytes) Main Memory Array Block Fast Sector	ATMEL Corporation
4	AT49BV008A-12TC	8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory Features 2.7V to 3.6V Read, Write Operation Fast Read Access Time - 120 ns Internal Erase, Program Control Sector Architecture One 8K Words (16K bytes) Boot Block with Programming Lockout Two 4K Words (8K bytes) Parameter Blocks One 496K Words (992K bytes) Main Memory Array Block Fast Sector	ATMEL Corporation

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Relevant Search Results

Part No	Description	Manufacturers	PDF
AT49BV-LV001	1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory Features Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) Fast Read Access Time - 70 ns Internal Program Control and Timer Sector Architecture One 16K Byte Boot Block with Programming Lockout Two 8K Byte Parameter Blocks Two Main Memory Blocks (32K, 64K Bytes) Fast Erase	ATMEL Corporation
AT49BV-LV002	2-Megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory Features Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) Fast Read Access Time - 70 ns Internal Program Control and Timer Sector Architecture One 16K Byte Boot Block with Programming Lockout Two 8K Byte Parameter Blocks Two Main Memory Blocks (96K, 128K Bytes) Fast Erase	ATMEL Corporation
AT49BV-LV040	4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory Features Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time 70 ns Internal Program Control and Timer 16K Bytes Boot Block with Lockout Fast Chip Erase Cycle Time 10 seconds Byte-by-byte Programming 30 s, Byte Typical Hardware Data Protection D	ATMEL Corporation
AT49SV802AT	8-megabit 1.8-volt Only Flash Memory	ATMEL Corporation
AT49SV802A	8-megabit 1.8-volt Only Flash Memory	ATMEL Corporation
AT49SV322DT	32-megabit (2M x 16) 1.8-volt Only Flash Memory	ATMEL Corporation
AT49SV322D	32-megabit (2M x 16) 1.8-volt Only Flash Memory	ATMEL Corporation

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