AT28HC64B PDF Datasheet

The AT28HC64B is 64K (8K x 8) High-speed Parallel EEPROM. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	AT28HC64B	64K (8K x 8) High-speed Parallel EEPROM Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option Ref. AT28HC64BF Datasheet) 1 to 64-byte Page Write Operation Low Power Dissipation	ATMEL Corporation
2	AT28HC64BF	64K (8K x 8) High Speed Parallel EEPROM Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 2 ms Maximum (Standard) 1 to 64-byte Page Write Operation Low Power Dissipation 40 mA Active Current 100 A CMOS Standby Current	ATMEL Corporation

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Relevant Search Results

Part No	Description	Manufacturers	PDF
AT28HC256	256K (32K x 8) High-speed Parallel EEPROM Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum 1 to 64-byte Page Write Operation Low Power Dissipation 80 mA Active Current 3 mA S	ATMEL Corporation
AT28HC256N	High-speed Parallel EEPROM Features Fast Read Access Time 90 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms Maximum 1 to 64-byte Page Write Operation Low Power Dissipation: 300 A Standby Current (CMOS	ATMEL Corporation
AT28HC64BF	64K (8K x 8) High Speed Parallel EEPROM Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 2 ms Maximum (Standard) 1 to 64-byte Page Write Operation Low Power Dissipation 40 mA Active Current 100 A CMOS Standby Current	ATMEL Corporation
AT28LV64B	64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection	ATMEL Corporation
AT28LV256	256K 32K x 8 Low Voltage CMOS E2PROM	ATMEL Corporation
AT28LV010	1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROM	ATMEL Corporation
AT28HC64BF	64K (8K x 8) High Speed Parallel EEPROM	ATMEL Corporation

List of most widely used semiconductors

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