APT8030 PDF Datasheet

The APT8030 is Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	APT8030	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8030B2VFR 800V 27A 0.300Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swi	Advanced Power Technology
2	APT8030B2VFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8030B2VFR 800V 27A 0.300Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swi	Advanced Power Technology
3	APT8030B2VR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8030B2VR 800V 27A 0.300Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds throug	Advanced Power Technology
4	APT8030JN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D S G D S G S SO 2 T- 27 APT8030JN APT8035JN 800V 800V 27.0A 0.30Ω 25.0A 0.35Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C	Advanced Power Technology

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Part No	Description	Manufacturers	PDF
APT8011	Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT8011JFLL 800V 51A 0.110W POWER MOS 7TM FREDFET S G D S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines l	Advanced Power Technology
APT8011JFLL	Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT8011JFLL 800V 51A 0.110W POWER MOS 7TM FREDFET S G D S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines l	Advanced Power Technology
APT8011JLL	Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT8011JLL 800V 51A 0.110W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and	Advanced Power Technology
APT8M80K	N-Channel MOSFET	Microsemi
APT8M100S	N-Channel MOSFET	Microsemi Corporation
APT8M100B	N-Channel MOSFET	Microsemi Corporation
APT8GT60KR	The Thunderbolt IGBT is a new generation of high voltage power IGBTs.	Advanced Power Technology

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