APT50GN120L2DQ2 PDF Datasheet

The APT50GN120L2DQ2 is IGBT, Insulated Gate Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	APT50GN120L2DQ2	IGBT, Insulated Gate Bipolar Transistor TYPICAL PERFORMANCE CURVES ® APT50GN120L2DQ2 APT50GN120L2DQ2G* APT50GN120L2DQ2(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench	Advanced Power Technology
2	APT50GN120L2DQ2G	IGBT, Insulated Gate Bipolar Transistor TYPICAL PERFORMANCE CURVES ® APT50GN120L2DQ2 APT50GN120L2DQ2G* APT50GN120L2DQ2(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench	Advanced Power Technology

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Part No	Description	Manufacturers	PDF
APT5010B2	Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7T	Advanced Power Technology
APT5010B2FLL	Power MOS 7 FREDFET APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® co	Advanced Power Technology
APT5010B2LC	high voltage N-Channel enhancement mode power MOSFET APT5010B2LC APT5010LLC 500V 47A 0.100W POWER MOS VITM B2LC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is T-MAX™ TO-264 achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate c	Advanced Power Technology
APT58M80J	N-Channel MOSFET	Microsemi Corporation
APT58M50J	N-Channel MOSFET	Microsemi Corporation
APT56M60L	N-Channel MOSFET	Microsemi Corporation
APT56M60B2	N-Channel MOSFET	Microsemi Corporation

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