APT10053LNR PDF Datasheet

The APT10053LNR is High Voltage Power MOSFETS. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	APT10053LNR	High Voltage Power MOSFETS t.in t.in	Advanced Power Technology

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Part No	Description	Manufacturers	PDF
APT1001	Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c	Advanced Power Technology
APT1001R1AVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds throu	Advanced Power Technology
APT1001R1BN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1001R3BN 1000V 10.0A 1.30Ω All Ratings: TC = 25°C unless otherwise specified. APT 1001RBN APT 1001R3BN UNIT Volts Amps N - CHANNEL ENHANCEMENT M	Advanced Power Technology
APT19M120J	N-Channel MOSFET	Microsemi Corporation
APT19F100J	N-Channel FREDFET	Micron Semiconductor
APT18M80S	N-Channel MOSFET	Microsemi Corporation
APT18M80B	N-Channel MOSFET	Microsemi Corporation

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