APM2350-P29 PDF Datasheet

The APM2350-P29 is Medium Power Amplifier Module. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	APM2350-P29	Medium Power Amplifier Module plerowTM APM2350-P29 Low Noise & High OIP3 Medium Power Amplifier Module Description The plerowTM APM-Series is an internally matched amplifier mini-module for such application band in SMD package with the output P1dB of 29 dBm. It is compactly designed for low current consumption and high OIP3. I	Advanced Semiconductor Business

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Part No	Description	Manufacturers	PDF
APM2300A	N-Channel Enhancement Mode MOSFET APM2300A N-Channel Enhancement Mode MOSFET Features 20V, 6A , RDS(ON)=25mΩ(typ.) @ VGS=10V RDS(ON)=32mΩ(typ.) @ VGS=4.5V RDS(ON)=40mΩ(typ.) @ VGS=2.5V Pin Description D Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package G S Top View of SOT-23 D	Etc
APM2301	P-Channel Enhancement Mode MOSFET APM2301 P-Channel Enhancement Mode MOSFET Features -20V, -2.8A , RDS(ON)=72mΩ(typ.) @ VGS=-10V RDS(ON)=100mΩ(typ.) @ VGS=-4.5V Pin Description D Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package G S Applications Power Management in Notebook Com	Etc
APM2301A	P-Channel Enhancement Mode MOSFET APM2301A Features -20V, -2.8A, RDS(ON)=72mΩ(typ.) @ VGS=-10V RDS(ON)=98mΩ(typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) P-Channel Enhancement Mode MOSFET Pin Description D S G Top View of SOT-23 S Applications Pow	Etc
APM2701CG	Dual Enhancement Mode MOSFET	TY Semiconductor
APM2701AC	Dual Enhancement Mode MOSFET	ANPEC
APM2700C	Dual enhancement Mode MOSFET	Anpec
APM2607	P-Channel Enhancement Mode MOSFET	Anpec Electronics Coropration

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