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AP2306AGN PDF Datasheet

The AP2306AGN is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 AP2306AGN N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2306AGN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 35mΩ 5A Description SOT-23 G Advanced Power MOSFETs utilized advanced processi
Advanced Power Electronics
Advanced Power Electronics
2 AP2306AGN-HF N-CHANNEL ENHANCEMENT MODE

AP2306AGN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS Compliant S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID D 30V 35mΩ 5A Description Advanced Power MOSFETs utilize
Advanced Power Electronics
Advanced Power Electronics
3 AP2306AGN-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP2306AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate Drive Lower On-resistance Surface-Mount Device RoHS-compliant, Halogen-free D BV DSS RDS(ON) G S 30V 35mΩ 5A ID Description Advanced Power MOSFETs from APEC provide the designer with t
Advanced Power Electronics
Advanced Power Electronics




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Part NoDescriptionManufacturersPDF
AP2302L 2A DDR TERMINATION REGULATOR

Preliminary Datasheet 2A DDR TERMINATION REGULATOR General Description The AP2302L linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 2A current continuously, providing enough current for most DDR appli
BCD Semiconductor
BCD Semiconductor
datasheet AP2302L pdf
AP2302GN N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2302GN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Small package outline ▼ Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 85mΩ 3.2A Description SOT-23 G The Advanced Power MOSFETs from APEC provide t
Advanced Power Electronics
Advanced Power Electronics
datasheet AP2302GN pdf
AP2302 3A DDR TERMINATION REGULATOR

Preliminary Datasheet 3A DDR TERMINATION REGULATOR General Description The AP2302 linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 3A current continuously, offers enough current for most DDR applicati
BCD Semiconductor
BCD Semiconductor
datasheet AP2302 pdf
AP2361 Diode, RectifierAmerican Micro semiconductor
American Micro semiconductor
datasheet AP2361 pdf
AP2346GN-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics
datasheet AP2346GN-HF pdf
AP2344GN-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics
datasheet AP2344GN-HF pdf
AP2344GEN-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFETAdvanced Power Electronics
Advanced Power Electronics
datasheet AP2344GEN-HF pdf


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