AO8800 PDF Datasheet

The AO8800 is Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	AO8800	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor July 2001 AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is su	ALPHA
2	AO8800	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor AO8800 General Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor The AO8800 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable f	FreesCale

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Relevant Search Results

Part No	Description	Manufacturers	PDF
AO8802	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor August 2002 AO8802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is	ETC
AO8804	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor March 2003 AO8804 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protec	ETC
AO8806	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Dec 2002 AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or	ETC
AO8846	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor	Alpha & Omega Semiconductors
AO8832	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor	Alpha & Omega Semiconductors
AO8830	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor	Alpha & Omega Semiconductors
AO8822	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor	Alpha & Omega Semiconductors

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