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ACE2600B PDF Datasheet

The ACE2600B is Dual N-Channel Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor

ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD pro
ACE Technology
ACE Technology




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ACE2607B P-Channel Enhancement Mode Field Effect Transistor

ACE2607B P-Channel Enhancement Mode Field Effect Transistor Description ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits for low voltage application such as portable equipment, power manageme
ACE Technology
ACE Technology
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ACE2607B P-Channel Enhancement Mode Field Effect TransistorACE Technology
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