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Datasheet 65N02R Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 65N02R | NTB65N02R NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK
Features
• • • • •
http://onsemi.com
V(BR)DSS 24 V RDS(on) TYP 8.4 mW @ 10 V ID MAX 65 A
Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low |  ON Semiconductor | data |
65N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 65N02R | NTB65N02R NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK
Features
• • • • •
http://onsemi.com
V(BR)DSS 24 V RDS(on) TYP 8.4 mW @ 10 V ID MAX 65 A
Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low ON Semiconductor data | | |
| 2 | 65N06 | 60V N-CHANNEL MOSFET KIA
SEMICONDUCTORS
60V N-CHANNEL MOSFET
65N06
1.Description
These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superi  KIA mosfet | | |
| 3 | 65N20-30 | SUM65N20-30 SUM65N20-30
New Product
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
200
rDS(on) (W)
0.030 @ VGS = 10 V
D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package ID (A)
65 a
APPLICATIONS
D Automotive – 42-V EPS an  Vishay Siliconix data | | |
| 4 | 65NF06 | STD65NF06 STD65NF06 STP65NF06
N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET
General features
Type STD65NF06 STP65NF06
■ ■
VDSS 60V 60V
RDS(on) <14mΩ <14mΩ
ID 60A 60A
3 1
1 2 3
Standard level gate drive 100% avalanche tested
DPAK
TO-220
Description
This Power MOSFET is  STMicroelectronics data | |
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