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Datasheet 3SK166A-2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3SK166A-2 | GaAs N-channel Dual Gate MES FET 3SK166A
GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office.
Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent |  Sony Corporation | gate |
3SK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3SK103 | Silicon N-Channel Dual Gate MOS FET ETC gate | | |
| 2 | 3SK121 | MOS FET Toshiba data | | |
| 3 | 3SK122 | MOS Field Effect Transistor w
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e e h s a t a
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m o c
 NEC transistor | | |
| 4 | 3SK126 | N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) Toshiba Semiconductor amplifier | | |
| 5 | 3SK127 | N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) Toshiba Semiconductor amplifier | | |
| 6 | 3SK131 | MOS FIELD EFFECT TRANSISTOR DATA SHEET SHEET DATA
MOS FIELD EFFECT TRANSISTOR
3SK131
RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
FEATURES
• Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0.05 pF TYP. • High Gps : 23 dB TYP. • Low NF : 1.3 dB TYP.
P NEC transistor | | |
| 7 | 3SK134B | RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK134B
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
FEATURES
• High Power Gain : • Low Noise Figure : Gps = 23.0 dB TYP. (@ = 900 MHz) NF = 2.4 dB TYP. (@ = 900 MHz)
PACKAGE DIMENSIONS (Unit : mm)
2. NEC transistor | |
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