3DD207 PDF Datasheet

The 3DD207 is Silicon NPN Power Transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	3DD207	Silicon NPN Power Transistors Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD207 DESCRIPTION ¡¤ With TO-3 package ¡¤ Low collector saturation voltage APPLICATIONS ¡¤ For audio amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and	Inchange Semiconductor
2	3DD2073	NPN Transistor 3DD2073 型 NPN 硅低大功率晶管符件 PCM ICM 限 Tjm Tstg Rth V(BR)CBO V(BR)CEO V(BR)EBO 直流 ICBO IEBO VBEsat VCEsat hFE Tc=25℃ VCE=10V IC=0.8A ICB=1mA ICE=1mA IEB=1mA VCB=120V VEB=5V Ic=0.5A IB=0.05A VCB=10V Ic=0.5A 范 25 1.5 175 -55~150 4 ≥150 ≥150 ≥5.0 ≤	ETC
3	3DD207I	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD207i DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A APPLICATIONS ·Designed for auto amplifier application. ABSOLU	Inchange Semiconductor

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Relevant Search Results

Part No	Description	Manufacturers	PDF
3DD200	Silicon Power Transistor Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD200 DESCRIPTION ¡¤ With TO-3 package ¡¤ High collector-base breakdown voltage : VCBO=250V APPLICATIONS ¡¤ For TV horizontal output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplifie	Inchange
3DD201	Silicon Power Transistor Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD201 DESCRIPTION ¡¤ With TO-3 package ¡¤ High collector-base breakdown voltage : VCBO=350V APPLICATIONS ¡¤ For TV horizontal output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplifie	Inchange
3DD208	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD208 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 1A APPLICATIONS ·D	Inchange Semiconductor
3DD2901	CASE-RATED BIPOLAR TRANSISTOR	Jilin Sino
3DD2603	SILICON NPN TRANSISTOR	FOSHAN BLUE ROCKET
3DD2553	CASE-RATED BIPOLAR TRANSISTOR	JILIN SINO
3DD2539	Silicon NPN Bipolar Transistor	Huajing Microelectronics

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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