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2SK665 PDF DatasheetThe 2SK665 is Silicon N-Channel MOS FET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | 2SK665 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK665
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
s Features
q High-speed switching q Small drive current owing to high input inpedance q High electrostatic breakdown voltage
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
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Panasonic Semiconductor |
| 2 | Silicon MOS FETs Silicon MOS FETs (Small Signal)
2SK0665 (2SK665)
Silicon N-Channel MOS FET
unit: mm
(0.425)
For switching I Features
0.3+0.1 0.0 3
0.15+0.10 0.05
1.25±0.10
(0.65) (0.65) 1.3±0.1 2.0±0.2 10°
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowabl
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Panasonic Semiconductor |
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