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2SK665 PDF Datasheet

The 2SK665 is Silicon N-Channel MOS FET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 2SK665 Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal) 2SK665 Silicon N-Channel MOS FET For switching unit: mm 2.1±0.1 s Features q High-speed switching q Small drive current owing to high input inpedance q High electrostatic breakdown voltage 0.65 0.425 1.25±0.1 0.425 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1
Panasonic Semiconductor
Panasonic Semiconductor
2 Silicon MOS FETs

Silicon MOS FETs (Small Signal) 2SK0665 (2SK665) Silicon N-Channel MOS FET unit: mm (0.425) For switching I Features 0.3+0.1 0.0 3 0.15+0.10 0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowabl
Panasonic Semiconductor
Panasonic Semiconductor




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Relevant Search Results

Part NoDescriptionManufacturersPDF
2SK662 Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK662 Silicon N-Channel Junction FET For low-frequency amplification unit: mm 2.1±0.1 s Features q High mutual conductance gm q Low noise type q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape, magazine packing. 0
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SK662 pdf
2SK663 Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK663 Silicon N-Channel Junction FET For low-frequency amplification For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q Low noise-figure (NF) q High gate to drain voltage VGDO q S-mini type package, allowing downsizing of the sets and automatic insertion
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SK663 pdf
2SK664 Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal) 2SK664 Silicon N-Channel MOS FET For switching unit: mm 2.1±0.1 s Features q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape, magazine packing. 0.65 0.425 1.25±0.1 0.425 1 2.0±0.2 1.3±0.1
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SK664 pdf
2SK699 N CHANNEL MOS FIELD EFFECT POWER TRANSISTORNEC
NEC
datasheet 2SK699 pdf
2SK696 Silicon N-Channel MOS FETHitachi
Hitachi
datasheet 2SK696 pdf
2SK695 SILICON N-CHANNEL MOS FETETC
ETC
datasheet 2SK695 pdf
2SK694 N-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor
datasheet 2SK694 pdf


List of most widely used semiconductors


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   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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