2SK412 PDF Datasheet

The 2SK412 is Silicon N-Channel MOS FET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SK412	Silicon N-Channel MOS FET http:, , www.datasheetlist.com, http:, , www.datasheetlist.com, http:, , www.datasheetlist.com,	Hitachi
2	2SK4120LS	N-Channel Silicon MOSFET Ordering number : ENA0823 2SK4120LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4120LS Features General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workabi	Sanyo Semicon Device
3	2SK4121LS	N-Channel Silicon MOSFET Ordering number : ENA0824 2SK4121LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4121LS Features General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workabi	Sanyo Semicon Device
4	2SK4122LS	N-Channel Silicon MOSFET Ordering number : ENA0825 2SK4122LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4122LS Features General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workabi	Sanyo Semicon Device

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Relevant Search Results

Part No	Description	Manufacturers	PDF
2SK410	N-Channel MOSFET (HF/VHF power amplifier) High breakdown voltage You can decrease handling current. Included gate protection diode No secondary breakdown Wide area of safe operation Simple bias circuitry No thermal runaway	Hitachi Semiconductor
2SK4143	SWITCHING N-CHANNEL POWER MOS FET DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4143 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 m�	NEC
2SK416	HIGH SPPED POWER SWITCHING Complementary pair	Hitachi Semiconductor
2SK494	Silicon N-Channel Junction FET	Hitachi Semiconductor
2SK492	Field Effect Transistor	ISAHAYA ELECTRONICS
2SK456	(2SKxxx) Dual Transistors	Toshiba
2SK455	(2SKxxx) Dual Transistors	Toshiba

List of most widely used semiconductors

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