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2SK368 PDF DatasheetThe 2SK368 is N-CHANNEL JUNCTION TYPE Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | 2SK368 | N-CHANNEL JUNCTION TYPE Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK368
Audio Frequency and High Voltage Amplifier Applications Constant Current Applications
2SK368
Unit: mm
· High breakdown voltage: VGDS = 100 V (min) · High input impedance: IGSS = 1.0 nA (max) (VGS = 80 V) · Small package
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 Toshiba Semiconductor |
| 2 | 2SK3680-01 | N-CHANNEL SILICON POWER MOSFET
2SK3680-01
FUJI POWER MOSFET
200309
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supp
|
 Fuji Electric |
| 3 | 2SK3681-01 | N-CHANNEL SILICON POWER MOSFET 2SK3681-01
FUJI POWER MOSFET
Super FAP-G Series
200401
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving power
11.6±0.2
Applications
Switching regulators
DC-DC converters
UPS (Uninterrupti
|
Fuji Electric |
| 4 | 2SK3682-01 | N-CHANNEL SILICON POWER MOSFET
2SK3682-01
FUJI POWER MOSFET
200309
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
TO-220AB
Applications
Switching regulators DC-DC converters UPS (Uninterruptible P
|
Fuji Electric |
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