2SK3161L PDF Datasheet

The 2SK3161L is Silicon N Channel MOS FET High Speed Power Switching. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SK3161L	Silicon N Channel MOS FET 2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS =90 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 RENESAS Package code: PRSS0004	Renesas
2	2SK3161L	Silicon N Channel MOS FET High Speed Power Switching 2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features Low on-resistance R DS = 90 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Dr	Hitachi Semiconductor

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Relevant Search Results

Part No	Description	Manufacturers	PDF
2SK3105	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent switching characteristics, and is suita	NEC
2SK3107	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for 1.6 ± 0.1 PA	NEC
2SK3108	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC, DC converter.	NEC
2SK3995	Silicon N-channel enhancement MOSFET	Panasonic
2SK3994	DC/DC Converter Motor Drive Applications	Toshiba Semiconductor
2SK3993	SWITCHING N-CHANNEL POWER MOSFET	NEC
2SK3992	SWITCHING N-CHANNEL POWER MOSFET	NEC

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