2SK3027 PDF Datasheet

The 2SK3027 is Silicon N-Channel Power F-MOS FET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SK3027	Silicon N-Channel Power F-MOS FET Power F-MOS FETs 2SK3027 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 4.1	Panasonic Semiconductor

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Part No	Description	Manufacturers	PDF
2SK30	Silicon N-Channel Power F-MOS FET 1. Avalanche energy capacity guaranteed 2. High-speed switching 3. Low ON-resistance 4. No secondary breakdown	Panasonic Semiconductor
2SK3000	Silicon N Channel MOS FET Low Frequency Power Switching 2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585 (Z) 1st. Edition December 1997 Features Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA) 4V gate drive devices. Small package (MPAK) Expansive drain to source surge power capability Outline MPAK 3	Hitachi Semiconductor
2SK3009	VX-2 Series Power MOSFET(600V 8A) SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK3009 (F8S60VX2) 600V 8A FEATURES œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. œ The static Rds(on) is small. œ The switching time is fast. œ Avalanche resistance guaranteed. APPLICAT	Shindengen Electric Mfg.Co.Ltd
2SK3995	Silicon N-channel enhancement MOSFET	Panasonic
2SK3994	DC/DC Converter Motor Drive Applications	Toshiba Semiconductor
2SK3993	SWITCHING N-CHANNEL POWER MOSFET	NEC
2SK3992	SWITCHING N-CHANNEL POWER MOSFET	NEC

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