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2SK2960 PDF DatasheetThe 2SK2960 is Silicon N-Channel Power F-MOS FET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | 2SK2960 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs
2SK2960
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
M Di ain sc te on na tin nc ue e, d
q Conta
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Panasonic |
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