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2SK2957L PDF DatasheetThe 2SK2957L is Silicon N Channel MOS FET High Speed Power Switching. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | 2SK2957L | Silicon N Channel MOS FET High Speed Power Switching 2SK2957(L),2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-567D (Z) 5th. Edition Jun 1998 Features
Low on-resistance R DS(on) = 7mΩ typ. 4V gate drive devices. High speed switching
Outline
LDPAK
4 D 4
1 G 1
2
3
2
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SK2957
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Hitachi Semiconductor |
| 2 | Silicon N Channel MOS FET 2SK2957(L), 2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005
Features
Low on-resistance RDS(on) = 7 mΩ typ. 4 V gate drive devices. High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPA
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Renesas |
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