2SK2857 PDF Datasheet

The 2SK2857 is N-CHANNEL MOS FIELD EFFECT TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Loading price/stock information...

NO	Part No	Descripción	Manufacturers
1	2SK2857	MOS Field Effect Transistor SMD Type MOS Field Effect Transistor 2SK2857 Features Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 m MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 m MAX. (VGS = 10 V, ID = 2.5 A) SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0	Kexin
2	2SK2857	N-CHANNEL MOS FIELD EFFECT TRANSISTOR DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and	NEC
3	2SK2857C	N-CHANNEL MOSFET Preliminary Data Sheet 2SK2857C N-CHANNEL MOSFET FOR SWITCHING R07DS1261EJ0200 Rev.2.00 Jun 11, 2015 Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features Directly driven by a 4.0	Renesas

Searching...

Relevant Search Results

Part No	Description	Manufacturers	PDF
2SK2800	Silicon N Channel MOS FET High Speed Power Switching 2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features Low on-resistance R DS(on) = 15 mΩ typ. High speed switching Low drive current 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1 2 S 3 1. Gate 2. Drain (Fl	Hitachi Semiconductor
2SK2802	Silicon N Channel MOS FET Low Frequency Power Switching 2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537C (Z) 4th. Edition Jun 1998 Features Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA) 2.5V gate drive devices. Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2802 Ab	Hitachi Semiconductor
2SK2803	MOSFET, Transistor 2SK2803 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) 1 PD EAS 2 I AS Tch Tstg Ratings 450 ± 30 ±3 ± 12 30 (Tc = 25ºC) 30 3 150 55 to +150 (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on)	Sanken electric
2SK2998	Silicon N Channel MOS Type Field Effect Transistor	Toshiba Semiconductor
2SK2996	N-Channel MOSFET Transistor	Inchange Semiconductor
2SK2995	N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)	Toshiba Semiconductor
2SK2993	N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)	Toshiba Semiconductor

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

Share Link

DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
Our site offers extensive datasheets for various electronic components including semiconductors, resistors, capacitors, connectors and more.

This site is particularly valuable for anyone working on circuit design, product development, or troubleshooting, as it houses comprehensive datasheets that cover everything from basic passive components to complex integrated circuits, sensors, and power management ICs.

Sitemap Link

Index : 1N 2SC 74H AD BC IRF

LM TD

DataSheet39.com | 2020 |

Privacy Policy | Contact Us