2SJ552L PDF Datasheet

The 2SJ552L is Silicon P Channel MOS FET High Speed Power Switching. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SJ552L	P-Channel MOSFE, Transistor 2SJ552(L), 2SJ552(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 0.042 Ω typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package co	Renesas
2	2SJ552L	Silicon P Channel MOS FET High Speed Power Switching 2SJ552(L),2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.042 Ω typ. Low drive current. 4V gate drive devices. High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source	Hitachi Semiconductor

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Part No	Description	Manufacturers	PDF
2SJ550	Silicon P Channel MOS FET High Speed Power Switching 2SJ550(L),2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.075 Ω typ. Low drive current. 4V gate drive devices. High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Sour	Hitachi Semiconductor
2SJ550L	Silicon P Channel MOS FET High Speed Power Switching 2SJ550(L),2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.075 Ω typ. Low drive current. 4V gate drive devices. High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Sour	Hitachi Semiconductor
2SJ550S	Silicon P Channel MOS FET High Speed Power Switching 2SJ550(L),2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.075 Ω typ. Low drive current. 4V gate drive devices. High speed switching. Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Sour	Hitachi Semiconductor
2SJ599	SWITCHING P-CHANNEL POWER MOS FET	NEC
2SJ598	MOS Field Effect Transistor	Guangdong Kexin Industrial
2SJ597	DC / DC Converter Applications	Sanyo Semicon Device
2SJ596	DC / DC Converter Applications	Sanyo Semicon Device

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