|
|
|
2SJ48 PDF DatasheetThe 2SJ48 is LOW FREQUENCY POWER AMPLIFIER. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
Loading price/stock information...
| NO | Part No | Descripción | Manufacturers |
| 1 | 2SJ48 | LOW FREQUENCY POWER AMPLIFIER This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
|
 Hitachi Semiconductor |
| 2 | 2SJ483 | Silicon P Channel MOS FET High Speed Power Switching 2SJ483
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-519 1st. Edition Features
Low on-resistance R DS(on) = 0.08Ω typ (at VGS = 10 V, I D = 2.5 A) 4V gate drive devices. Large current capacitance ID = 5 A
Outline
TO-92MOD.
D
G
3 S
2
1
1. Source 2. Drain 3. Gate
2SJ483
|
Hitachi Semiconductor |
| 3 | 2SJ484 | Silicon P-Channel MOS FET High Speed Power Switching 2SJ484
Silicon P-Channel MOS FET High Speed Power Switching
ADE-208-501 A 2nd. Edition Features
Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS = 10V, ID = 1A) Low drive current High speed switching 4V gate drive devices.
Outline
UPAK 2 3 1
4 D
G
1. Gate 2. Drain 3. Source 4. Drain
|
Hitachi Semiconductor |
| 4 | 2SJ485 | Ultrahigh-Speed Switching Applications Ordering number:ENN6434
P-Channel Silicon MOSFET
2SJ485
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive.
Package Dimensions
unit:mm 2083B
[2SJ485]
6.5 5.0 4
1.5
2.3
0.5
0.85 0.7
5.5
7.0
0.8 1.6
1.2
0.6 1 2 3
7.5
0.5
2.3
|
 Sanyo Semicon Device |
|
Searching...
Relevant Search Results
Share Link
Sitemap Link
|
