2SJ319 PDF Datasheet

The 2SJ319 is Silicon P-Channel MOS FET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SJ319	Silicon P-Channel MOS FET 2SJ319(L), 2SJ319(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S	Hitachi Semiconductor
2	2SJ319L	Silicon P-Channel MOS FET 2SJ319(L), 2SJ319(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S	Hitachi Semiconductor
3	2SJ319S	Silicon P-Channel MOS FET 2SJ319(L), 2SJ319(S) Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S	Hitachi Semiconductor

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Relevant Search Results

Part No	Description	Manufacturers	PDF
2SJ312	Silicon P Channel MOS Type Field Effect Transistor 2SJ312 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 π MOSIV) 2SJ312 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain source ON resistance : RDS (ON) = 80 mΩ (typ.) l High forward transfer admittance : \|Yfs\| = 8.0 S (typ.) l Low l	Toshiba Semiconductor
2SJ313	Silicon P Channel MOS Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application - High breakdown voltage: VDSS = 180 V - High forward transfer admittance: \|Yfs\| = 0.7 S (typ.) - Complementary to 2SK2013 2SJ313 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Character	Toshiba Semiconductor
2SJ315	Silicon P Channel MOS Type Field Effect Transistor 2SJ315 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 π MOSIV) 2SJ315 DC DC Converter Unit: mm FEATURES - 4 Volt gate drive - Low drain source ON resistance : RDS (ON) = 0.25 Ω (typ.) - High forward transfer admittance : \|Yfs\| = 3.0 S (typ.) - Low leakage current : IDSS = 100	Toshiba Semiconductor
2SJ399	Silicon P-Channel MOS FET	Renesas
2SJ387S	Silicon P-Channel MOS FET	Hitachi Semiconductor
2SJ387L	Silicon P-Channel MOS FET	Hitachi Semiconductor
2SJ387	Silicon P-Channel MOS FET	Hitachi Semiconductor

List of most widely used semiconductors

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