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2SD600 PDF Datasheet

The 2SD600 is 100V / 1A / NPN Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 2SD600 PNP / NPN Epitaxial Planar Silicon Transistors

Ordering number : ENN346G 2SB631, 631K, 2SD600, 600K PNP, NPN Epitaxial Planar Silicon Transistors 100V, 120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100, 120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions
ON Semiconductor
ON Semiconductor
2 100V / 1A / NPN Transistor

Low-Frequency Power Amplifier Applications, · High breakdown voltage VCEO 100, 120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
Sanyo Semicon Device
Sanyo Semicon Device
3 SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION ·With TO-126 package ·Complement to type 2SB631, 631K ·High breakdown voltage VCEO100, 120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier appli
SavantIC
SavantIC
4 2SD600K PNP / NPN Epitaxial Planar Silicon Transistors

Ordering number : ENN346G 2SB631, 631K, 2SD600, 600K PNP, NPN Epitaxial Planar Silicon Transistors 100V, 120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100, 120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions
ON Semiconductor
ON Semiconductor




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Relevant Search Results

Part NoDescriptionManufacturersPDF
2SD600K 100V / 1A / NPN Transistor

· Low-Frequency Power Amplifier Applications · High breakdown voltage VCEO 100, 120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
Sanyo Semicon Device
Sanyo Semicon Device
datasheet 2SD600K pdf
2SD601A Silicon NPN epitaxial planer type

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD601A pdf
2SD602 Silicon NPN epitaxial planer type

Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Unit: mm s Features q q 2.8 0.3 0.65±0.15 +0.2 2.9 0.05 1.9±0.2 +0.2 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD602 pdf
2SD697A (2SD647A / 2SD697A) Silicon NPN Triple Diffused Mesa TypeToshiba
Toshiba
datasheet 2SD697A pdf
2SD692 Silicon NPN Darlingtion Power TransistorInchange Semiconductor
Inchange Semiconductor
datasheet 2SD692 pdf
2SD691 (2SD691 / 2SD692) Si NPN DIFFUSED JUNCTION MESAPanasonic
Panasonic
datasheet 2SD691 pdf
2SD689 Silicon NPN Darlington Power TransistorINCHANGE
INCHANGE
datasheet 2SD689 pdf


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   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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