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2SD596 PDF Datasheet

The 2SD596 is AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 2SD596 NPN EPITAXIAL SILICON TRANSISTOR

RoHS 2SD596 2SD596 TRANSISTOR (NPN) DFEATURES TPower dissipation .,LPCM: 0.2 W (Tamb=25℃) 0. 95¡ 0. 025 1. 02 0. 35 2. 92¡ 0. 05 Collector current ICM: 0.7 OCollector-base voltage A 1. 9 V(BR)CBO: 30 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150�
WEJ
WEJ
2 Silicon NPN transistor

2SD596 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions SOT-23 塑封封 NPN 半 三 管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 , Features 高 hFE, 2SB624 互 。 High hFE, complementary pair with 2SB624. 用途 , Applications 用于音 放大。 Audio frequency am
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
3 NPN Plastic Encapsulated Transistor

Elektronische Bauelemente 2SD596 0.7A , 30V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current gain Complementary to 2SB624 MARKING DV4 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A
SeCoS
SeCoS
4 BIPOLAR TRANSISTORS

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SD596 FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC
Rectron
Rectron




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Relevant Search Results

Part NoDescriptionManufacturersPDF
2SD592 Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). (Ta=25˚C) Rating
Panasonic Semiconductor
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datasheet 2SD592 pdf
2SD592A SILICON TRANSISTOR

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datasheet 2SD592A pdf
2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES Complementary to NEC 2SB624 PNP Transistor. High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA) PACKAGE DRAWING (Unit: mm) ABSOLUTE MAXIMUM RATINGS (TA = 25�
NEC
NEC
datasheet 2SD596A pdf
2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDNEC
NEC
datasheet 2SD596A pdf
2SD592A Silicon NPN epitaxial planar typePanasonic Semiconductor
Panasonic Semiconductor
datasheet 2SD592A pdf
2SD592 SILICON TRANSISTORMicro Electronics
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2SD587A Silicon Triple Diffused TransistorETC
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datasheet 2SD587A pdf


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