2SD2636 PDF Datasheet

The 2SD2636 is Silicon NPN Triple Diffused Type. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SD2636	Silicon NPN Triple Diffused Type 2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications High-Power Switching Applications High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic S Col	Toshiba

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Part No	Description	Manufacturers	PDF
2SD2604	Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2604 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Absolute Maximum Ratings (Tc = 25°C)	Toshiba Semiconductor
2SD261	LOW FREQUENCY POWER AMPLIFIER Transistors 2SD261	ETC
2SD2620	Silicon NPN epitaxial planer type(For low-frequency amplification) Transistors 2SD2620J Silicon NPN epitaxial planer type Unit: mm 1.60+0.05 0.03 1.00±0.05 0.80±0.05 For low-frequency amplification I Features High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) High emitter to base voltage VBEO SS-mini type package	Panasonic Semiconductor
2SD2A	Diode, Rectifier	American Micro semiconductor
2SD2908	Transistor	Bruckewell
2SD288	SILICON POWER TRANSISTOR	SavantIC
2SD287C	NPN/PNP Silicon Triple Diffused Mesa Transistor	ETC

List of most widely used semiconductors

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