2SD256 PDF Datasheet

The 2SD256 is NPN Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SD256	NPN Transistor	ETC
2	2SD2560	Silicon NPN Triple Diffused Planar Transistor(Audio/ Series Regulator and General Purpose) Equivalent circuit C Darlington 2SD2560 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE= 2A VCB=10V, f=1MH- 2SD2560 100max 100max 150min 5000min 2.5max 3.0max 70typ 120	Sanken electric
3	2SD2560	SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2560 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1647 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified	SavantIC
4	2SD2561	Silicon NPN Triple Diffused Planar Transistor(Audio/ Series Regulator and General Purpose) Equivalent circuit C Darlington 2SD2561 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE= 2A VCB=10V, f=1MH- 2SD2561 100max 100max 150min 5000min 2.5max 3.0max 70typ 120	Sanken electric

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Relevant Search Results

Part No	Description	Manufacturers	PDF
2SD2500	SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR 2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2500 HORIZONTAL DEFLECTION OUTPUT COLOR TV Unit: mm l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 3 V (Max.) l High Speed : tf = 0.35 s (Typ.) l Collector Metal (Fin) is Fully Covered with Mold Resin.	Toshiba Semiconductor
2SD2526	Silicon NPN Triple Diffused Type TRANSISTOR 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.5 V (m	Toshiba Semiconductor
2SD2527	Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Power Transistors 2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm s Features q q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Fu	Panasonic Semiconductor
2SD2A	Diode, Rectifier	American Micro semiconductor
2SD2908	Transistor	Bruckewell
2SD288	SILICON POWER TRANSISTOR	SavantIC
2SD287C	NPN/PNP Silicon Triple Diffused Mesa Transistor	ETC

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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