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2SD1606 PDF DatasheetThe 2SD1606 is Silicon NPN Triple Diffused. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | 2SD1606 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1606
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 3A
APPLICATIONS ·Designed for low frequency power amplifiers applications.
AB
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Inchange Semiconductor |
| 2 | Silicon NPN Triple Diffused 2SD1606
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3
1
2 3
2SD1606
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter
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Hitachi Semiconductor |
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