2SD1407 PDF Datasheet

The 2SD1407 is PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	2SD1407	PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) 2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SB1016 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junc	Wing Shing Computer Components
2	2SD1407	SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SB1016 APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 sim	SavantIC
3	2SD1407A	Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A 2SD1407A Power Amplifier Applications Industrial Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Tc = 25°C)	Toshiba Semiconductor

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Part No	Description	Manufacturers	PDF
2SD1402	NPN TRIPLE DIFFUSED(COLOR TV HORIZONTAL OUTPUT) 2SD1402 COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR SC-65 ! ! High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Bas	Wing Shing Computer Components
2SD1403	Silicon Diffused Power Transistor(GENERAL DESCRIPTION) 2SD1403 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL MT-100 CONDITIONS	Wing Shing Computer Components
2SD1407A	Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A 2SD1407A Power Amplifier Applications Industrial Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Tc = 25°C)	Toshiba Semiconductor
2SD1999	PNP / NPN Epitaxial Planar Transistors	Sanyo Semicon Device
2SD1998	PNP / NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device
2SD1997	Compact Motor Driver Applications	Sanyo Semicon Device
2SD1996	Silicon PNP epitaxial planer type(For low-frequency power amplification)	Panasonic Semiconductor

List of most widely used semiconductors

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